|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB1392 description collector-emitter breakdown voltage- : v (br)ceo = -60v(min.) good linearity of h fe applications designed for low frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -70 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current-continuous -4 a i cm collector current-peak -8 a collector power dissipation @ t a =25 2 p c collector power dissipation @ t c =25 25 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB1392 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -50ma; r be = -60 v v (br)cbo collector-base breakdown voltage i c = -10 a; i e = 0 -70 v v (br)ebo emitter-base breakdown voltage i e = -10 a; i c = 0 -5 v v ce (sat) collector-emitter saturation voltage i c = -2a; i b = -0.2a b -1.0 v v be (sat) base-emitter saturation voltage i c = -2a; i b = -0.2a b -1.2 v v be (on) base-emitter on voltage i c = -1a; v ce = -4v -1.0 v i cbo collector cutoff current v cb = -50v; i e = 0 -10 a i ceo collector cutoff current v ce = -50v; r be = -10 a h fe-1 dc current gain i c = -1a; v ce = -4v 60 200 h fe-2 dc current gain i c = -0.1a; v ce = -4v 35 ? h fe- 1 classifications b c 60-120 100-200 isc website www.iscsemi.cn 2 |
Price & Availability of 2SB1392 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |